| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STL21N65M5 is an N-Channel Power MOSFET with a 650V drain-to-source voltage rating and a continuous drain current capability of 17A at a case temperature.
This MOSFET offers a low on-resistance of 179mOhm maximum at 8.5A and 10V gate drive voltage. It features a gate charge of 50nC maximum at 10V and an input capacitance of 1950pF maximum at 100V.
The device operates at a maximum junction temperature of 150°C and has a maximum gate-source voltage of ±25V. It is constructed using MOSFET (Metal Oxide) technology.
Packaged in an 8-PowerVDFN format, the STL21N65M5 is designed for surface mounting. The supplier device package is specified as PowerFlat™ (8x8) HV. It has a maximum power dissipation of 125W at the case temperature and 3W at the ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 650 V.
17 A at case temperature Tc.
179 mOhm at 8.5 A drain current and 10 V gate-source voltage.
Maximum 50 nC at 10 V gate-source voltage.
Maximum junction temperature is 150°C.
Surface mount 8-PowerVDFN (PowerFlat 8x8 HV) package.
Maximum 1950 pF at 100 V drain-source voltage.