| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
66,000 pcs
|
66000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
40,020 pcs
|
40020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STL20N6F7 is an N-Channel power MOSFET manufactured by STMicroelectronics. It is designed for high-efficiency power conversion applications.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 60V. The device has a maximum input capacitance (Ciss) of 1600 pF at Vds = 25V and a maximum gate charge (Qg) of 25 nC at Vgs = 10V. These parameters are critical for switching performance and drive circuit design.
The part is housed in a POWERFLAT package, suitable for surface-mount assembly and compact power supply designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 60V.
The maximum input capacitance (Ciss) is 1600 pF at Vds = 25V.
The maximum gate charge (Qg) is 25 nC at Vgs = 10V.