| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STL18N65M5 is a high-performance N-Channel MOSFET belonging to the MOSFET (Metal Oxide) technology family. It is designed for power applications, featuring a maximum drain-to-source voltage (Vdss) of 650V and a continuous drain current of 15A (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 240mOhm at 7.5A and 10V, and a gate charge (Qg) of 31nC at 10V. The device operates with a drive voltage of 10V and has a maximum gate-to-source voltage (Vgs) of ±25V. Its input capacitance (Ciss) is 1240pF at 100V.
This MOSFET is housed in an 8-PowerVDFN package, also known as PowerFlat™ (5x6), and is designed for surface mounting. It has a maximum power dissipation of 57W (Tc) and can operate at junction temperatures up to 150°C.
The STL18N65M5 is suitable for various power switching applications where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 650 V.
The continuous current rating is 15A (Tc).
The maximum on-resistance (Rds On) is 240mOhm at 7.5A and 10V.
The STL18N65M5 is in an 8-PowerVDFN package, also known as PowerFlat™ (5x6).
The STL18N65M5 is a surface mount device.
The operating temperature is up to 150°C (TJ).