| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STL18N65M2 is a single N-Channel MOSFET from the discrete semiconductor product category. This component features a high drain-to-source voltage rating of 650V and can handle a continuous current of 8A (Tc).
Key electrical characteristics include a maximum on-resistance of 365mOhm at 4A and 10V, an input capacitance of 764pF at 100V, and a gate charge of 21.5nC at 10V. The gate-source voltage has a maximum rating of ±25V, with a gate threshold voltage of 4V at 250µA.
Designed for surface mounting, the STL18N65M2 comes in an 8-PowerVDFN package, specifically the PowerFlat™ (5x6) HV variant. It operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 57W (Tc). The technology used is MOSFET (Metal Oxide).
This MOSFET is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected. Its specifications make it suitable for various power switching applications where high voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650 V.
8 A at case temperature (Tc).
365mOhm maximum at 4A drain current and 10V gate voltage.
8-PowerVDFN surface mount, also known as PowerFlat (5x6) HV.
150°C.
57 W at case temperature.