| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STL16N65M2 is a high-voltage N-Channel MOSFET. It is designed for power switching applications, offering a drain-source breakdown voltage (Vdss) of 650V and a continuous drain current (Id) of 7.5A at the case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 395mOhm at 3.5A and 10V gate drive voltage. The device has a gate charge (Qg) of 19.5 nC maximum at 10V and an input capacitance (Ciss) of 718 pF maximum at 100V.
This MOSFET operates within a junction temperature range of -55°C to 150°C and has a maximum gate-source voltage (Vgs) of ±25V. It is constructed using MOSFET (Metal Oxide) technology.
The STL16N65M2 is packaged in an 8-PowerVDFN surface mount package, specifically the PowerFlat™ (5x6) HV supplier device package. This mounting type is suitable for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
8-PowerVDFN (PowerFlat 5x6 HV) surface-mount package.
-55°C to 150°C (junction temperature).
7.5A at case temperature 25°C.
395mOhm at 3.5A drain current and 10V gate-source voltage.
19.5 nC at 10V gate-source voltage.
718 pF at 100V drain-source voltage.