| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STL160NS3LLH7 is an N-Channel power MOSFET manufactured by STMicroelectronics. It features a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current rating of 160A at case temperature (Tc). The device offers a low on-resistance of 2.1mOhm maximum at 18A and 10V gate drive, enabling high efficiency in power conversion applications.
This MOSFET is designed for surface mount assembly and is housed in an 8-PowerVDFN package, specifically the PowerFlat (5x6) format. It supports gate drive voltages of 4.5V and 10V for flexible logic-level or standard gate drive compatibility. The device has a maximum power dissipation of 84W at case temperature.
Key electrical characteristics include an input capacitance of 3245pF at 25V Vds and a total gate charge of 20nC at 4.5V Vgs, which contribute to its switching performance. The maximum gate threshold voltage is 2.3V at 1mA drain current, and the maximum gate-source voltage rating is ±20V. The operating junction temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30V.
The maximum continuous drain current is 160A at case temperature (Tc).
The maximum on-resistance (Rds on) is 2.1mOhm at 18A drain current and 10V gate-source voltage.
The device is housed in an 8-PowerVDFN surface mount package, specifically the PowerFlat (5x6) format.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage (Vgs(th)) is 2.3V at 1mA drain current.
The maximum input capacitance (Ciss) is 3245pF at 25V drain-source voltage.