| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STL15N65M5 is a single N-Channel MOSFET transistor. It is designed for power applications with a maximum drain-source voltage (Vdss) of 650V and a continuous drain current of 10A at a case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 375mOhm at 5A and 10V, a gate charge (Qg) of 22nC at 10V, and an input capacitance (Ciss) of 816pF at 100V. The device operates within a temperature range of -55°C to 150°C (TJ).
This MOSFET is housed in an 8-PowerVDFN package, also known as PowerFlat™ (5x6), and is designed for surface mounting. The technology utilized is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET).
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1 (Unlimited), and REACH Unaffected status. The maximum power dissipation is rated at 52W (Tc).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
10A at case temperature Tc.
Maximum 375mOhm at Id=5A and Vgs=10V.
-55°C to 150°C junction temperature.
8-PowerVDFN surface-mount package (PowerFlat 5x6).
22nC at Vgs=10V.
RoHS3 compliant based on existing database entry, but this information is unverified.