| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,580 pcs
|
2580 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STL140N6F7 is a robust N-Channel MOSFET belonging to the discrete semiconductor product category. It is engineered with MOSFET (Metal Oxide) technology and offers a drain-to-source voltage (Vdss) of 60V.
Key electrical characteristics include a maximum on-resistance (Rds On) of 2.5mOhm at 16A and 10V, a gate charge (Qg) of 40nC at 10V, and an input capacitance (Ciss) of 2700pF at 25V. The device supports a gate-source voltage (Vgs) up to ±20V and has a gate threshold voltage (Vgs(th)) of 4V at 1mA.
With a maximum power dissipation of 4.8W (ambient) and 125W (case temperature), and an operating temperature range up to 175°C, this MOSFET is suitable for demanding thermal conditions. It is housed in a Surface Mount package, specifically the 8-PowerVDFN or PowerFlat™ (5x6) configuration, facilitating integration into compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
145A at case temperature Tc.
Maximum 2.5mOhm at Vgs=10V, Id=16A.
125W at case temperature Tc and 4.8W at ambient temperature Ta.
Maximum 4V at Id=1mA.
175°C.
8-PowerVDFN (PowerFlat 5x6).