| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STL13NM60N is a single N-Channel MOSFET from the Transistors - FETs, MOSFETs - Single category. This device is designed for power applications, offering a Drain to Source Voltage (Vdss) of 600V and a continuous drain current of 10A (Tc).
Key electrical characteristics include a maximum Gate to Source Voltage (Vgs) of ±30V and a Gate Threshold Voltage (Vgs(th)) of 4V at 250µA. The input capacitance (Ciss) is 790 pF at 50V, and the On-Resistance (Rds On) is a maximum of 385mOhm at 5A, 10V. The device operates at temperatures up to 150°C (TJ).
This MOSFET utilizes MOSFET (Metal Oxide) technology and is packaged in an 8-PowerVDFN format, designed for surface mounting. The supplier device package is specified as PowerFlat™ (8x8) HV. The maximum power dissipation is 3W (Ta) and 90W (Tc).
Compliance information indicates RoHS3 compliance and an MSL of 1 Unlimited, though these are currently unverified. REACH status is listed as Unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
8-PowerVDFN surface mount package with PowerFlat HV (8x8) dimensions.
150°C.
10A at case temperature.
385mOhm maximum at 5A drain current and 10V gate voltage.
4V maximum at 250µA drain current.