| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STL13N60DM2 is an N-Channel MOSFET with a 600V drain-to-source voltage (Vdss) and a continuous drain current of 8A at a case temperature (Tc).
This MOSFET offers a maximum on-resistance (Rds On) of 370mOhm at 4A and 10V Vgs. Key electrical characteristics include a gate charge (Qg) of 19nC maximum at 10V Vgs and an input capacitance (Ciss) of 730pF maximum at 100V Vds. The gate-source voltage (Vgs) maximum is ±25V, with a gate threshold voltage (Vgs(th)) of 5V maximum at 250µA Id.
Designed for surface mounting, the STL13N60DM2 comes in an 8-PowerVDFN package, specifically the PowerFlat™ (5x6) HV supplier device package. It operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 52W (Tc).
Compliance information indicates RoHS3 compliance and an MSL of 1. REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600V.
The continuous drain current is 8A, measured at the case temperature.
The maximum on-resistance (Rds On) is 370mOhm when measured at 4A drain current and 10V gate-source voltage.
This MOSFET is designed for surface mounting.
The operating temperature range is up to 150°C (TJ).