| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
102,000 pcs
|
102000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,420 pcs
|
1420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STL120N8F7 is an N-Channel MOSFET with a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) of 120A at a case temperature (Tc). It offers a low on-resistance (Rds On) of 4.4mOhm at 11.5A and 10V gate-source voltage (Vgs).
This MOSFET operates within a temperature range of -55°C to 175°C (TJ) and has a gate charge (Qg) of 60 nC at 10V. The input capacitance (Ciss) is 4570 pF at 25V.
Packaged in an 8-PowerVDFN format with a PowerFlat™ (5x6) supplier device package, it is designed for surface mount applications. The device has a maximum power dissipation of 4.8W when mounted on a PCB (Ta) and 140W when cooled via the case (Tc).
It utilizes MOSFET (Metal Oxide) technology and has a gate threshold voltage (Vgs(th)) of 4V at 250µA. The maximum gate-source voltage (Vgs) is ±20V, and the drive voltage is 10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V
8-PowerVDFN surface mount package
-55°C to 175°C
120A at case temperature
4V at 250µA drain current
140W maximum power dissipation