STL11N65M5 The STL11N65M5 is an N-Channel MOSFET from STMicroelectronics. It offers a 650V drain-source voltage and 8.5A current handling capability.
Mfr Part #:

STL11N65M5

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STL11N65M5 is an N-Channel MOSFET from STMicroelectronics. It offers a 650V drain-source voltage and 8.5A current handling capability.
✓ Total Stock: 7,000 pcs
$ Price Range: $2.56

STL11N65M5 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request

STL11N65M5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STL11N65M5 Description

Short technical summary and product information.

This N-Channel MOSFET, part number STL11N65M5 from STMicroelectronics, is designed for power applications. It features a high drain-to-source voltage rating of 650V and can handle a continuous drain current of 8.5A at a case temperature.

 

The MOSFET has a maximum Rds On of 530mOhm at 4.25A and 10V gate-source voltage. The gate charge (Qg) is 17nC maximum at 10V, and input capacitance (Ciss) is 644pF maximum at 100V.

 

It operates within a temperature range of -55°C to 150°C (TJ). The device utilizes Metal Oxide Semiconductor technology and is supplied in an 8-PowerVDFN package, specifically a PowerFLAT™ (5x5) configuration.

 

Mounting is achieved via surface mount technology. The maximum gate-source voltage is ±25V, and the gate threshold voltage (Vgs(th)) is 5V maximum at 250µA. The maximum power dissipation is rated at 70W (Tc).

STL11N65M5 Quick Information

Product Type: MOSFET
Canonical Name: STL11N65M5 N-Channel MOSFET
Subcategory: Single

STL11N65M5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STL11N65M5 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STL11N65M5 Features

  • 650V drain-source voltage rating.
  • 8.5A continuous current capability.
  • 530mOhm maximum Rds On.
  • Surface mountable 8-PowerVDFN package.
  • Operates from -55°C to 150°C.

STL11N65M5 Applications

  • Suitable for power switching applications.
  • Used in high voltage circuits.
  • Ideal for compact power designs.
  • Efficient power conversion designs.

STL11N65M5 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of STL11N65M5?

The maximum drain-source voltage is 650V.

What is the package type of STL11N65M5?

It is available in an 8-PowerVDFN package with PowerFLAT (5x5) as the supplier device package.

What is the operating temperature range of STL11N65M5?

The junction temperature range is -55°C to 150°C.

What is the gate charge of STL11N65M5?

The maximum gate charge is 17 nC at 10V.

What is the Rds(on) of STL11N65M5?

The maximum Rds(on) is 530 mOhm at 4.25A, 10V.

What is the input capacitance of STL11N65M5?

The maximum input capacitance is 644 pF at 100V.

What is the gate threshold voltage of STL11N65M5?

The maximum gate threshold voltage is 5V at 250µA.

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