| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STL11N3LLH6 from STMicroelectronics is a single N-Channel MOSFET built on Metal Oxide technology. It offers a drain-to-source voltage (Vdss) of 30V and can handle a continuous current of 11A at the case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 7.5mOhm when measured at 5.5A and 10V Vgs. The gate charge (Qg) is rated at a maximum of 17nC at 4.5V Vgs, and the input capacitance (Ciss) is 1690pF at 24V Vds. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 250µA, with a maximum gate-source voltage of ±20V.
This MOSFET is designed for surface mounting and comes in an 8-PowerVDFN package, specifically the PowerFlat™ (3.3x3.3) variant. It operates within a wide temperature range of -55°C to 150°C (TJ). The maximum power dissipation is 2W when measured at the ambient temperature (Ta) and 50W at the case temperature (Tc).
Compliance information indicates RoHS3 compliance and an MSL rating of 1. REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-PowerVDFN surface mount package with PowerFlat (3.3x3.3) footprint.
-55°C to 150°C (junction).
7.5 milliohms maximum at 5.5A and 10V gate drive.
1V maximum at 250µA drain current.
50W at case temperature, 2W at ambient.