| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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201 pcs
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201 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STL10N60M2 is an N-Channel power MOSFET manufactured by STMicroelectronics. It features a drain-to-source voltage rating of 600V and a continuous drain current of 5.5A at 25°C. The device has a maximum on-resistance of 660mOhm at 2.5A gate drive of 10V.
This MOSFET is designed for high-efficiency power conversion applications. It offers a maximum gate charge of 13.5nC at 10V and an input capacitance of 400pF at 100V drain-source voltage, enabling fast switching performance. The maximum power dissipation is 48W at case temperature.
The STL10N60M2 is housed in an 8-PowerVDFN package with a PowerFlat (5x6) HV supplier device package, suitable for surface mount assembly. The operating junction temperature range extends to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 600V.
The continuous drain current is 5.5A at 25°C.
The maximum on-resistance is 660mOhm at 2.5A drain current and 10V gate-source voltage.
The maximum operating junction temperature is 150°C.
The STL10N60M2 is available in an 8-PowerVDFN surface mount package with PowerFlat (5x6) HV supplier device package.