| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
36,000 pcs
|
36000 pcs | On Request | 1 | On Request | On Request | 1020 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STK820 is an N-Channel enhancement mode MOSFET designed for low voltage power management applications. It offers a drain-source voltage rating of 25V and continuous drain current of 21A. The device features a low on-resistance of 7.3mOhm maximum at 10.5A and 10V gate drive, enabling efficient power switching. With a maximum power dissipation of 5.2W, it is suitable for moderate power levels. The gate threshold voltage is 2.5V maximum at 250µA, allowing logic level drive. The device is housed in the PolarPak surface mount package, which provides excellent thermal performance. The operating junction temperature range is up to 150°C. Typical applications include DC-DC converters, load switches, and power management in portable devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
25V.
PolarPak surface mount package.
150°C junction temperature.
21A at Ta.
7.3mOhm maximum at 10.5A, 10V.
Maximum 2.5V at 250µA.
9.5nC maximum at 4.5V.