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104,000 pcs
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104000 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The STMicroelectronics STI5N52U is an N-channel Power MOSFET utilizing UltraFASTmesh™ technology. This technology provides advantages such as reduced on-resistance, Zener gate protection, and high dv/dt capability, along with an enhanced fast body-drain recovery diode.
Key electrical specifications include a drain-source breakdown voltage (Vds) of 525V and a continuous drain current (Id) of 4.4A at 25°C. The on-resistance (Rds(on)) is a maximum of 1.5 Ohm at 2.2A and 10V gate-source voltage. The device operates within a temperature range of -55°C to 150°C (TJ).
This MOSFET is housed in an I2PAK package, suitable for through-hole mounting. It is important to note that this product is still in production but is not recommended for new designs, as indicated in its datasheet.
Applications for this device include general switching applications where its robust features can be utilized.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (Vds) for the STI5N52U is 525V.
The maximum continuous drain current (Id) at 25°C for the STI5N52U is 4.4A.
The maximum on-resistance (Rds On) for the STI5N52U is 1.5 Ohm when measured at 2.2A drain current and 10V gate-source voltage.
The STI5N52U operates within a temperature range of -55°C to 150°C.
The STI5N52U is supplied in an I2PAK package, with the case described as TO-262-3 Long Leads, I²Pak, TO-262AA.
The RoHS status for the STI5N52U is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the STI5N52U is 1.