| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,900 pcs
|
9900 pcs | On Request | 1 | On Request | On Request | 1006 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STI42N65M5 is an N-channel Power MOSFET utilizing MDmesh M5 vertical process technology. This device offers extremely low on-resistance, making it suitable for applications requiring high power and efficiency.
Key electrical specifications include a drain-source breakdown voltage of 650V and a maximum continuous drain current of 33A at 25°C. The Rds On is a maximum of 79mΩ at 16.5A and 10V gate-source voltage. It also features a low gate charge of 100 nC and input capacitance of 4650 pF.
This MOSFET operates within a junction temperature range of -55°C to 150°C and has a total power dissipation of 190W at 25°C. The device is 100% avalanche tested.
The STI42N65M5 is available in an I2PAK package and is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 650 V at ID = 1 mA, VGS = 0 V.
The continuous drain current is 33 A at TC = 25°C and 20.8 A at TC = 100°C, limited by maximum junction temperature.
The maximum on-resistance is 79 mΩ at ID = 16.5 A and VGS = 10 V.
-55°C to 150°C.
I2PAK through-hole package with through-hole mounting.
The maximum gate charge is 100 nC at VGS = 10 V.
0.66 °C/W for D²PAK, I²PAK, TO-220, TO-247 packages.