| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STI33N65M2 is an N-Channel MOSFET with a 650V drain-to-source voltage (Vdss) and a continuous drain current of 24A (Tc).
This MOSFET features a low on-resistance (Rds On) of 140mOhm at 12A and 10V, and a gate charge (Qg) of 41.5nC at 10V. The input capacitance (Ciss) is 1790pF at 100V. It operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 190W (Tc).
Packaged in a TO-262-3 Long Leads, I²Pak, TO-262AA format, the STI33N65M2 is designed for through-hole mounting. Its technology is based on MOSFET (Metal Oxide) principles.
This component is suitable for various power switching applications where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 650V.
The STI33N65M2 is available in a TO-262-3 Long Leads, I²Pak, TO-262AA package, with a supplier device package of I2PAK.
The maximum operating junction temperature is 150°C.
The maximum on-resistance is 140mOhm at Id=12A and Vgs=10V.
The maximum gate charge is 41.5nC at Vgs=10V.
The maximum input capacitance is 1790pF at Vds=100V.
The maximum power dissipation is 190W at case temperature.