| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | 1232+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STI32N65M5 is an N-Channel MOSFET with a high drain-to-source voltage rating of 650V. It is designed for efficient power switching applications, featuring a continuous drain current of 24A at 25°C and a maximum power dissipation of 150W.
This MOSFET utilizes Metal Oxide Semiconductor (MOS) technology and has a low Rds On resistance of 119mOhm at 12A and 10V gate drive voltage. The gate threshold voltage is 5V at 250µA, and the maximum gate-source voltage is ±25V. Its input capacitance (Ciss) is rated at 3320 pF at 100V, with a maximum gate charge (Qg) of 72 nC at 10V.
The STI32N65M5 is housed in an I2PAK package suitable for through-hole mounting. It operates at temperatures up to 150°C (TJ). This component is suitable for various power electronics designs requiring reliable high-voltage switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
24A at 25°C case temperature.
TO-262-3 Long Leads, I²Pak, TO-262AA (I2PAK).
119mΩ.
150°C.
72nC.
±25V.