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STI24NM60N The STMicroelectronics STI24NM60N is an N-Channel MOSFET with a 600V drain-to-source voltage and 17A continuous current rating. It is designed for through-hole mounting.
Mfr Part #:

STI24NM60N

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STI24NM60N is an N-Channel MOSFET with a 600V drain-to-source voltage and 17A continuous current rating. It is designed for through-hole mounting.
✓ Total Stock: 1,700 pcs
$ Price Range: $2.56

STI24NM60N Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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Non-Authorised Inventory information
1,700 pcs
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1700 pcs On Request 1 On Request On Request On Request On Request On Request
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STI24NM60N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STI24NM60N Description

Short technical summary and product information.

The STMicroelectronics STI24NM60N is a power MOSFET featuring an N-Channel configuration. It offers a high drain-to-source voltage (Vdss) of 600V and a continuous drain current capability of 17A at the case temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 190mOhm at 8A and 10V, a gate charge (Qg) of 46nC at 10V, and an input capacitance (Ciss) of 1400pF at 50V. The gate threshold voltage (Vgs(th)) is 4V at 250µA, with a maximum gate-source voltage of ±30V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 125W (Tc). It utilizes MOSFET (Metal Oxide) technology.

 

The STI24NM60N is packaged in a TO-262-3 Long Leads, I²Pak, TO-262AA format, suitable for through-hole mounting. It is classified as RoHS3 Compliant.

STI24NM60N Quick Information

Product Type: MOSFET
Canonical Name: STI24NM60N N-Channel MOSFET
Subcategory: N-Channel

STI24NM60N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STI24NM60N Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STI24NM60N Features

  • 600V drain-to-source voltage rating.
  • 17A continuous drain current capability.
  • Low 190mOhm maximum on-resistance.
  • Through-hole mounting in I2PAK package.
  • RoHS3 compliant for environmental standards.

STI24NM60N Applications

  • Suitable for high voltage power supplies.
  • Used in industrial motor control.
  • Applicable for power factor correction.
  • Ideal for general purpose switching.

STI24NM60N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

The maximum drain-to-source voltage is 600V.

What package does the STI24NM60N come in?

It is available in a TO-262-3 through-hole package (I2PAK).

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

What is the gate threshold voltage?

The maximum gate threshold voltage is 4V at 250µA drain current.

What is the on-resistance?

The maximum on-resistance is 190mOhm at 8A drain current and 10V gate-source voltage.

What is the maximum gate-source voltage?

The maximum gate-source voltage is ±30V.

What type of transistor is this?

It is an N-Channel MOSFET (Metal Oxide).

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