| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | 810 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STI23NM60N is an N-Channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vdss) of 600V and a continuous drain current of 19A (Tc).
The MOSFET has a low on-resistance (Rds On) of 180mOhm at 9.5A and 10V, with a gate charge (Qg) of 60nC at 10V. Its input capacitance (Ciss) is 2050pF at 50V. The device can dissipate up to 150W (Tc) and operates at temperatures up to 150°C (TJ).
This MOSFET utilizes Metal Oxide Semiconductor technology and is suitable for through-hole mounting. It comes in an I2PAK package, also referred to as TO-262-3 Long Leads or TO-262AA.
The STI23NM60N is RoHS3 compliant, has an MSL of 1, and is REACH unaffected. Its specifications make it suitable for various power switching and control applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The STI23NM60N has a maximum drain-source voltage of 600V.
The continuous drain current for the STI23NM60N is 19A.
The Rds On is a maximum of 180mOhm at 9.5A and 10V.
The maximum power dissipation is 150W.
The operating temperature range is up to 150°C.
The STI23NM60N is in an I2PAK package.
The STI23NM60N is designed for through-hole mounting.