| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,600 pcs
|
2600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STI18N65M2 is a high-performance N-Channel MOSFET suitable for various power switching applications. It features a maximum drain-source voltage (Vdss) of 650V and a continuous drain current of 12A at a case temperature of Tc.
Key electrical characteristics include a maximum on-resistance (Rds On) of 330mOhm at 6A and 10V, a gate charge (Qg) of 20nC at 10V, and a gate threshold voltage (Vgs(th)) of 4V at 250µA. The MOSFET operates with a gate-source voltage (Vgs) up to ±25V and requires a drive voltage of 10V.
This device is housed in a TO-262-3 Long Leads, I²Pak, TO-262AA package, designed for through-hole mounting. It has a maximum power dissipation of 110W (Tc) and an operating junction temperature up to 150°C.
The STI18N65M2 utilizes MOSFET (Metal Oxide) technology, making it a reliable choice for power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 650V.
The maximum continuous drain current is 12A at case temperature (Tc).
The maximum power dissipation is 110W at case temperature (Tc).
The device is available in TO-262-3 Long Leads (I²Pak / TO-262AA) through-hole package.
The maximum operating junction temperature (TJ) is 150°C.
The maximum on-resistance is 330mOhm at 6A drain current and 10V gate-source voltage.
The maximum gate charge is 20nC at 10V gate-source voltage.