| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STI13NM60N is an N-Channel MOSFET from STMicroelectronics designed for high-voltage switching applications. It offers a maximum drain-source voltage of 600V and a continuous drain current of 11A at case temperature. The device features a low on-resistance of 360mOhm maximum at 5.5A and 10V gate-source drive, enabling efficient power conversion. With a gate charge of 30nC and input capacitance of 790pF, it is suitable for moderate-speed switching circuits. The maximum power dissipation is 90W at case temperature, and the operating junction temperature range spans -55°C to 150°C. The MOSFET is packaged in a through-hole I2PAK (TO-262-3) package, which simplifies mounting on PCBs and provides good thermal performance. Typical applications include switch-mode power supplies, motor drives, and DC-DC converters where high voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
11A at case temperature.
360mOhm maximum at 5.5A and 10V gate-source voltage.
-55°C to 150°C junction temperature.
TO-262-3 Long Leads, I²Pak, TO-262AA (I2PAK).
4V maximum at 250µA drain current.
90W at case temperature.