| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,657 pcs
|
1657 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
374 pcs
|
374 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STI10NM60N is an N-Channel MOSFET with a robust design for various power applications. It features a maximum drain-to-source voltage (Vdss) of 600V and can handle a continuous current of 10A (Tc) with a maximum power dissipation of 70W (Tc).
This MOSFET has an on-resistance (Rds On) of 550mOhm at 4A and 10V, and a gate charge (Qg) of 19nC at 10V. The input capacitance (Ciss) is 540pF at 50V. It operates within a temperature range of -55°C to 150°C (TJ).
The STI10NM60N utilizes MOSFET (Metal Oxide) technology and comes in an I2PAK (TO-262) package with through-hole mounting. Its gate threshold voltage (Vgs(th)) is a maximum of 4V at 250µA, and the maximum gate-source voltage (Vgs) is ±25V.
This component is suitable for applications requiring high voltage switching and power handling capabilities. Its through-hole mounting and I2PAK package facilitate integration into circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V.
The continuous drain current is 10A at case temperature.
The maximum power dissipation is 70W at case temperature.
The maximum on-resistance is 550mOhm at 4A drain current and 10V gate-source voltage.
The operating junction temperature range is -55°C to 150°C.
It is available in a through-hole TO-262 (I2PAK) package.
The maximum gate threshold voltage is 4V at 250µA drain current.