| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Storage Temperature | |
| Tape & Reel |
The STH8NA80FI is an N-Channel enhancement mode Power MOSFET manufactured by STMicroelectronics. This component is designed for power applications, offering a high drain-source voltage rating of 800V and a continuous drain current capability of 4.5A. The on-resistance is specified at 1.5ohm.
This MOSFET is housed in an ISOWATT218 package, suitable for through-hole mounting. Its construction utilizes a silicon Metal-oxide Semiconductor FET technology.
Key electrical characteristics include its 800V V DSS and 4.5A I(D). The device is suitable for various power switching and amplification applications where high voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 800V.
The continuous drain current is 4.5A.
The on-resistance is 1.5ohm.
The STH8NA80FI is supplied in the ISOWATT218 package.
