| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | 9718 | On Request | On Request | |
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Operating Temperature | |
| Power Dissipation |
The STMicroelectronics STH60N10 is an N-Channel Power MOSFET designed for various electronic applications. This component offers a breakdown voltage of 100V and a maximum power dissipation of 200W.
It is housed in a TO-247AC package, providing robust thermal performance. The MOSFET has a minimum drain-source resistance of 25mΩ and can operate at temperatures up to 175°C.
This part is suitable for power switching and amplification circuits where high voltage and power handling capabilities are required. Its specifications make it a reliable choice for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 100V.
The maximum power dissipation is 200W.
The maximum operating temperature is 175°C.
The package type is TO-247AC.
The minimum drain-source resistance is 25mΩ.