| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STH410N4F7-6AG is a robust N-Channel MOSFET with a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) capability of 200A at a case temperature (Tc).
This MOSFET offers a low on-resistance (Rds On) of 1.1mOhm maximum at 90A and 10V gate-source voltage, ensuring efficient power handling. Key electrical characteristics include a gate charge (Qg) of 141 nC maximum at 10V and an input capacitance (Ciss) of 11500 pF maximum at 25V. The gate threshold voltage (Vgs(th)) is 4.5V maximum at 250µA, and the maximum gate-source voltage is ±20V.
With a maximum power dissipation of 365W at the case temperature, this device is suitable for demanding thermal environments. It operates within a temperature range of -55°C to 175°C (TJ).
The STH410N4F7-6AG is packaged in an H2PAK-6 configuration, designed for surface mounting. Its RoHS3 compliance and Moisture Sensitivity Level (MSL) 1 rating indicate suitability for various manufacturing processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V maximum.
200A at case temperature.
1.1mOhm maximum at 90A, 10V.
141nC at 10V.
-55°C to 175°C junction temperature.
Surface mount H2PAK-6 (TO-263-7, D²Pak with 6 leads and tab).
4.5V maximum at 250µA.