STH3N150-2 The STH3N150-2 is an N-Channel MOSFET from STMicroelectronics designed for power applications. It features a 1500V breakdown voltage and a 2.5A continuous drain current.
Mfr Part #:

STH3N150-2

Available from 5 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STH3N150-2 is an N-Channel MOSFET from STMicroelectronics designed for power applications. It features a 1500V breakdown voltage and a 2.5A continuous drain current.
✓ Total Stock: 30,214 pcs
$ Price Range: $2.56

STH3N150-2 Available from 5 distributors

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✓ Non-Authorised

STH3N150-2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Style
Mounting Type
Number of Channels
Operating Temperature
Power Dissipation
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STH3N150-2 Description

Short technical summary and product information.

The STMicroelectronics STH3N150-2 is a high-voltage N-Channel MOSFET designed for power switching applications. It offers a drain-source breakdown voltage of 1500V and a continuous drain current of 2.5A at a case temperature of Tc.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 9 Ohms at 1.3A and 10V Vgs, and a gate-source threshold voltage (Vgs(th)) of 5V at 250µA. The gate charge (Qg) is 29.3 nC maximum at 10V Vgs, and input capacitance (Ciss) is 939 pF maximum at 25V Vds. The MOSFET operates with a drive voltage of 10V and has a maximum gate-source voltage rating of ±30V.

 

With a maximum power dissipation of 140W (Tc) and an operating junction temperature of 150°C, this device is suitable for demanding thermal environments. It utilizes MOSFET (Metal Oxide) technology and is part of the PowerMESH tradename series.

 

The STH3N150-2 is supplied in a Surface Mount H2PAK-2 package, designed for efficient heat dissipation. The standard package quantity is 1000 units, typically supplied in Cut Tape.

STH3N150-2 Quick Information

Product Type: MOSFET
Series: STH3N150-2
Canonical Name: STH3N150-2 N-Channel Power MOSFET
Subcategory: MOSFETs

STH3N150-2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STH3N150-2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STH3N150-2 Features

  • 1500V drain-source breakdown voltage.
  • 2.5A continuous drain current.
  • 9 Ohm maximum Rds On at 1.3A, 10V.
  • Surface mount H2PAK-2 package.
  • 150°C maximum operating temperature.

STH3N150-2 Applications

  • Suitable for high-voltage power switching.
  • Used in power supply circuits.
  • Applicable in motor control systems.
  • Ideal for lighting applications.

STH3N150-2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the STH3N150-2?

1500 V.

What is the continuous drain current rating?

2.5 A at Tc.

What is the maximum on-resistance?

9 Ohm at 1.3 A and 10 V gate drive.

What is the package type?

H2PAK-2 surface-mount package.

What is the operating junction temperature range?

Up to 150 °C.

What is the maximum power dissipation?

140 W at Tc.

What is the gate charge?

29.3 nC maximum at 10 V.

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