| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,830 pcs
|
4830 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STH360N4F6-2 is a single N-Channel MOSFET designed for power applications. It offers a drain-to-source voltage (Vdss) of 40V and a continuous current capability of 180A at the case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 1.25mOhm at 60A and 10V, a gate charge (Qg) of 340nC at 10V, and an input capacitance (Ciss) of 17930pF at 25V. The gate threshold voltage (Vgs(th)) is a maximum of 4.5V at 250µA, with a maximum gate-source voltage (Vgs) of ±20V.
This MOSFET operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 300W (Tc). It is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, designed for surface mounting.
The STH360N4F6-2 utilizes MOSFET (Metal Oxide) technology and is rated for 10V drive voltage. Its RoHS status is compliant, and it has an MSL rating of 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V maximum.
Surface-mount H2PAK-2 (TO-263-3, D2Pak) package.
-55°C to 175°C.
180A at Tc.
1.25mOhm maximum at 60A, 10V.
340nC maximum at 10V.
300W at Tc.