STH315N10F7-6 The STH315N10F7-6 is a 100V, 180A N-channel Power MOSFET from STMicroelectronics. It features ultra-low on-resistance of 2.3mOhm in a surface mount H2PAK-6 package.
Mfr Part #:

STH315N10F7-6

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STH315N10F7-6 is a 100V, 180A N-channel Power MOSFET from STMicroelectronics. It features ultra-low on-resistance of 2.3mOhm in a surface mount H2PAK-6 package.
✓ Total Stock: 9,712 pcs
$ Price Range: $2.56

STH315N10F7-6 Available from 3 distributors

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✓ Non-Authorised
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5,000 pcs
5000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 2202+ On Request On Request
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1,712 pcs
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STH315N10F7-6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STH315N10F7-6 Description

Short technical summary and product information.

The STH315N10F7-6 is a high-performance N-channel Power MOSFET designed and manufactured by STMicroelectronics. This device offers a maximum drain-to-source voltage of 100 V and a continuous drain current of 180 A at case temperature, making it suitable for high-power applications. With a maximum on-resistance of just 2.3 mOhm at 60 A and 10 V gate drive, the STH315N10F7-6 delivers excellent conduction efficiency and low power losses. The gate charge is 180 nC at 10 V, contributing to fast switching performance. The input capacitance is 12800 pF at 25 V drain-source voltage. The device can dissipate up to 315 W of power and operates over a junction temperature range of -55°C to +175°C. Housed in a surface-mount H2PAK-6 package (TO-263-7, D²Pak with 6 leads and tab), the STH315N10F7-6 is ideal for space-constrained designs requiring high current handling. Typical applications include DC-DC converters, motor drives, and power management systems where high efficiency and thermal performance are critical.

STH315N10F7-6 Quick Information

Product Type: MOSFET - Single
Canonical Name: STH315N10F7-6 N-Channel Power MOSFET
Subcategory: Power MOSFET

STH315N10F7-6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STH315N10F7-6 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STH315N10F7-6 Features

  • Maximum drain-source voltage of 100 V.
  • Continuous drain current rating of 180 A.
  • Ultra-low on-resistance of 2.3 mOhm.
  • Gate charge of 180 nC for fast switching.
  • Maximum power dissipation of 315 W.

STH315N10F7-6 Applications

  • Suitable for high-current DC-DC converter stages.
  • Ideal for motor drive and inverter circuits.
  • Used in battery management and power supply designs.
  • Applicable to automotive power management systems.

STH315N10F7-6 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the STH315N10F7-6?

The maximum drain-source voltage is 100 V.

What is the operating temperature range of the STH315N10F7-6?

The operating junction temperature range is -55°C to +175°C.

What package does the STH315N10F7-6 come in?

The device is available in a surface-mount H2PAK-6 package, also referred to as TO-263-7 (D²Pak with 6 leads and tab).

What is the continuous drain current rating of the STH315N10F7-6?

The continuous drain current is 180 A at case temperature.

What is the typical on-resistance of the STH315N10F7-6?

The maximum on-resistance is 2.3 mOhm at 60 A drain current and 10 V gate-source voltage.

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