| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STH30N65DM6-7AG is an automotive-grade N-channel MOSFET with a drain-to-source voltage (Vdss) of 650V. This device is designed for demanding applications requiring high reliability and performance.
Key electrical specifications include a continuous drain current (Id) of 28A at 25°C (Tc) and a maximum power dissipation of 223W (Tc). The on-resistance (Rds On) is rated at a maximum of 115mOhm at 10A and 10V gate-source voltage (Vgs). The gate threshold voltage (Vgs(th)) is 4.75V at 250µA, and the maximum gate charge (Qg) is 46nC at 10V.
This MOSFET utilizes Metal Oxide Semiconductor (MOSFET) technology and operates within a temperature range of -55°C to 150°C (TJ). It is available in a Surface Mount package, specifically the H2PAK-7 (TO-263-8, D²Pak).
The STH30N65DM6-7AG is suitable for various automotive applications where robust power switching is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
28A.
115mOhm at 10A and 10V gate drive.
46nC at 10V gate voltage.
-55°C to 150°C junction temperature.
Surface mount H2PAK-7 (TO-263-8, D²Pak).
Maximum 4.75V at 250µA drain current.