| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics N-Channel MOSFET, part number STH200N10WF7-2, is designed for demanding applications requiring high current and voltage handling capabilities. It offers a drain-to-source voltage (Vdss) of 100V and a maximum continuous drain current of 180A at case temperature.
The MOSFET exhibits a low on-resistance (Rds On) of 4.8 mOhm at 90A and 10V gate drive, minimizing conduction losses. Key electrical parameters include a gate threshold voltage (Vgs(th)) of 4.5V and a maximum gate-to-source voltage of ±20V. Input capacitance (Ciss) is rated at 4430 pF at 25V, and gate charge (Qg) is 93 nC at 10V.
With a maximum power dissipation of 340W (Tc) and an operating temperature range of -55°C to 175°C (TJ), this device is suitable for thermal management in high-power systems. It utilizes MOSFET (Metal Oxide) technology.
The STH200N10WF7-2 comes in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, designed for surface mounting. The supplier package code is H2Pak-2.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Maximum drain-to-source voltage is 100V.
It is available in a surface mount TO-263-3 (D²Pak) package.
Operating junction temperature range is -55°C to 175°C.
Maximum on-resistance is 4mOhm at Id = 90A, Vgs = 10V.
Maximum gate charge is 93nC at Vgs = 10V.
Maximum continuous drain current is 180A at case temperature.
Maximum gate threshold voltage is 4.5V at Id = 250µA.