| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,980 pcs
|
1980 pcs | On Request | 1 | On Request | On Request | 1806+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STH185N10F3-2 is a high-performance N-Channel MOSFET designed for demanding applications. It features a maximum drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 180A at 25°C, with a maximum power dissipation of 315W (Tc).
This MOSFET offers a low on-resistance (Rds On) of 4.5mOhm at 60A and 10V gate drive voltage, ensuring efficient power transfer. The gate threshold voltage (Vgs(th)) is 4V at 250µA, and the maximum gate-source voltage (Vgs) is ±20V. Input capacitance (Ciss) is rated at 6665 pF at 25V.
Packaged in an H2Pak-2 (TO-263-3, D²Pak) format, the STH185N10F3-2 is suitable for surface mounting. It operates within a temperature range of -55°C to 175°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
The STH185N10F3-2 is available in a surface-mount H2PAK-2 package, which is compatible with TO-263 and D²Pak footprints.
-55°C to 175°C junction temperature.
180A at 25°C case temperature.
Maximum 4.5mOhm at 60A and 10V gate drive.
114.6nC at 10V gate voltage.
Maximum 4V at 250µA drain current.