| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STH175N4F6-2AG is a single N-Channel MOSFET manufactured by STMicroelectronics. This device is designed for power applications, offering a drain-to-source voltage (Vdss) of 40V and a continuous drain current capability of 120A at a case temperature.
Key electrical characteristics include a low on-resistance (Rds On) of 2.4 mOhm at 60A and 10V gate-source voltage, and a gate charge (Qg) of 130 nC at 10V. The MOSFET operates within a wide temperature range of -55°C to 175°C (TJ).
This component utilizes MOSFET (Metal Oxide) technology and is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, also known as H2Pak-2. It is designed for surface mounting.
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are currently unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
120A at case temperature Tc.
2.4 mOhm maximum at 60A drain current and 10V gate-source voltage.
H2PAK-2 (TO-263-3, D²Pak variant) surface-mount package.
-55°C to 175°C junction temperature.
130 nC at 10V gate-source voltage.