| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
240 pcs
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240 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Height | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Length | |
| Mounting Style | |
| Mounting Type | |
| Number of Channels | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Width |
The STMicroelectronics STH170N8F7-2 is a power MOSFET designed for various applications. It is an N-Channel enhancement mode device with a maximum drain-source voltage (Vds) of 80V and a continuous drain current (Id) of 120A at a case temperature.
Key electrical characteristics include a low drain-source on-resistance (Rds On) of 3.7 mOhm at 60A and 10V, and a gate-source threshold voltage (Vgs(th)) ranging from 2.5V to 4.5V. The device supports a gate-source voltage (Vgs) of up to ±20V and has a gate charge (Qg) of 120 nC.
This MOSFET operates within a temperature range of -55°C to 175°C. It is housed in an H2PAK-2 package suitable for surface mounting. The dimensions are 15.8mm in length, 10.4mm in width, and 4.8mm in height. The technology used is MOSFET (Metal Oxide).
Additional specifications include a power dissipation of 250W (Tc), input capacitance (Ciss) of 8710 pF, and typical turn-on and turn-off delay times of 38 ns and 79 ns, respectively. Rise time is 53 ns and fall time is 37 ns.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 80 V.
The continuous drain current is 120 A.
The Rds On resistance is a maximum of 3.7 mOhm at 60A and 10V.
The operating temperature range is -55°C to 175°C.
This MOSFET is in an H2PAK-2 package.
This MOSFET is mounted using SMD/SMT.
The gate charge is a maximum of 120 nC at 10V.