| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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114,000 pcs
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114000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics STH145N8F7-2AG is an automotive-grade N-channel power MOSFET designed for demanding applications. It offers an 80V drain-source breakdown voltage and can handle a continuous drain current of 90A (Tc). The MOSFET exhibits a low on-resistance of 4 mOhm at 45A and 10V gate-source voltage, ensuring efficient power transfer.
Key electrical characteristics include a gate charge of 96 nC (max) at 10V and an input capacitance of 6340 pF (max) at 40V. The device operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 200W (Tc).
Packaged in an H2Pak-2 (TO-263-3, D²Pak) surface-mount package, the STH145N8F7-2AG is suitable for various power management circuits. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 80 V.
The continuous drain current is 90 A.
The maximum on-resistance is 4 mOhm at 45A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 175°C.
It is supplied in the H2Pak-2 package, also known as TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.
The gate charge is a maximum of 96 nC at 10V gate-source voltage.