STH145N8F7-2AG The STMicroelectronics STH145N8F7-2AG is an automotive-grade N-channel MOSFET with an 80V drain-source breakdown voltage and a continuous drain current of 90A. It features a low on-resistance of 4 mOhm at 45A and 10V.
Mfr Part #:

STH145N8F7-2AG

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STH145N8F7-2AG is an automotive-grade N-channel MOSFET with an 80V drain-source breakdown voltage and a continuous drain current of 90A. It features a low on-resistance of 4 mOhm at 45A and 10V.
✓ Total Stock: 114,000 pcs
$ Price Range: $2.56

STH145N8F7-2AG Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
114,000 pcs
114000 pcs On Request 1 On Request On Request On Request On Request On Request

STH145N8F7-2AG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STH145N8F7-2AG Description

Short technical summary and product information.

The STMicroelectronics STH145N8F7-2AG is an automotive-grade N-channel power MOSFET designed for demanding applications. It offers an 80V drain-source breakdown voltage and can handle a continuous drain current of 90A (Tc). The MOSFET exhibits a low on-resistance of 4 mOhm at 45A and 10V gate-source voltage, ensuring efficient power transfer.

 

Key electrical characteristics include a gate charge of 96 nC (max) at 10V and an input capacitance of 6340 pF (max) at 40V. The device operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 200W (Tc).

 

Packaged in an H2Pak-2 (TO-263-3, D²Pak) surface-mount package, the STH145N8F7-2AG is suitable for various power management circuits. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles.

STH145N8F7-2AG Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STH145N8F7-2AG N-Channel MOSFET
Subcategory: N-Channel

STH145N8F7-2AG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STH145N8F7-2AG Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STH145N8F7-2AG Features

  • 80V drain-source breakdown voltage.
  • 90A continuous drain current.
  • 4 mOhm maximum on-resistance.
  • Automotive-grade N-channel MOSFET.
  • H2Pak-2 surface-mount package.

STH145N8F7-2AG Applications

  • Suitable for power switching circuits.
  • Used in automotive applications.
  • Efficient power management solutions.
  • High-performance circuit designs.

STH145N8F7-2AG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the STH145N8F7-2AG MOSFET?

The drain-source breakdown voltage is 80 V.

What is the continuous drain current for the STH145N8F7-2AG?

The continuous drain current is 90 A.

What is the maximum on-resistance (Rds On) for this MOSFET?

The maximum on-resistance is 4 mOhm at 45A drain current and 10V gate-source voltage.

What is the operating temperature range for the STH145N8F7-2AG?

The operating temperature range is -55°C to 175°C.

What package type is the STH145N8F7-2AG MOSFET supplied in?

It is supplied in the H2Pak-2 package, also known as TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

What is the gate charge (Qg) of the STH145N8F7-2AG?

The gate charge is a maximum of 96 nC at 10V gate-source voltage.

Home
Account

Categories