| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,964 pcs
|
1964 pcs | On Request | 1 | On Request | On Request | 2116+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-channel MOSFET, part number STH140N8F7-2, is manufactured by STMicroelectronics. It is designed for surface mount applications and comes in a TO-263-3, D²Pak package.
Key electrical specifications include a drain-to-source voltage (Vdss) of 80V and a continuous drain current (Id) of 90A at a case temperature (Tc). The on-resistance (Rds On) is a maximum of 4mOhm at 45A and 10V gate-source voltage. It features a gate charge (Qg) of 96nC at 10V and an input capacitance (Ciss) of 6340pF at 40V.
The MOSFET operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 200W (Tc). The gate threshold voltage (Vgs(th)) is 4.5V at 250µA, and the maximum gate-source voltage is ±20V.
This component is suitable for various power switching applications where high current and voltage handling are required. Its surface mount package facilitates integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 80V.
It uses an H2PAK-2 surface mount package, equivalent to TO-263-3 or D²Pak.
The component operates reliably between -55°C and 175°C.
The device supports a continuous drain current of 90A under case temperature conditions.
The maximum power dissipation is rated at 200W under case temperature conditions.
The maximum gate threshold voltage is 4.5V measured at 250µA drain current.
The maximum on-resistance is 4mΩ when tested at 45A and 10V.