STH130N10F3-2 The STMicroelectronics STH130N10F3-2 is an N-Channel Power MOSFET designed for high current switching applications. It features a 100V drain-source voltage and a continuous drain current of 120A.
Mfr Part #:

STH130N10F3-2

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STH130N10F3-2 is an N-Channel Power MOSFET designed for high current switching applications. It features a 100V drain-source voltage and a continuous drain current of 120A.
✓ Total Stock: 1,888 pcs
$ Price Range: $2.56

STH130N10F3-2 Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
988 pcs
988 pcs On Request 1 On Request On Request 19+ On Request On Request
Non-Authorised Inventory information
900 pcs
900 pcs On Request 1 On Request On Request 19+ On Request On Request

STH130N10F3-2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STH130N10F3-2 Description

Short technical summary and product information.

This STMicroelectronics STH130N10F3-2 is an N-channel enhancement mode Power MOSFET utilizing STripFET™ III technology. It is designed to minimize on-resistance and gate charge for superior switching performance.

 

Key electrical specifications include a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 120A at 25°C. The maximum on-resistance (Rds On) is 9.3mΩ at 60A and 10V gate drive. It also features a maximum gate charge (Qg) of 57 nC at 10V and a maximum gate-source voltage (Vgs) of ±20V.

 

The device operates over a wide temperature range from -55°C to 175°C (TJ). It has a maximum power dissipation of 250W at 25°C (Tc).

 

The STH130N10F3-2 is supplied in an H2PAK-2 package, suitable for surface mounting. This package type is also referred to as TO-263-3, D²Pak (2 Leads + Tab), TO-263AB. It is available on tape and reel.

STH130N10F3-2 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STH130N10F3-2 N-Channel Power MOSFET
Subcategory: Single FETs, MOSFETs

STH130N10F3-2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STH130N10F3-2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STH130N10F3-2 Features

  • N-Channel Power MOSFET technology.
  • 100V drain-source voltage rating.
  • 120A continuous drain current.
  • Low 9.3mΩ maximum on-resistance.
  • H2PAK-2 surface mount package.

STH130N10F3-2 Applications

  • High-current power switching circuits.
  • DC-DC converter primary switches.
  • Motor drive and inverter stages.
  • Uninterruptible power supplies.

STH130N10F3-2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the STH130N10F3-2?

The drain-source voltage rating is 100V.

What is the maximum continuous drain current?

120A at 25°C case temperature.

What is the on-resistance of the STH130N10F3-2?

9.3mΩ maximum at 60A drain current and 10V gate-source voltage.

What is the gate charge of this MOSFET?

57nC maximum at 10V gate-source voltage.

What is the operating temperature range?

-55°C to 175°C junction temperature.

What package is the STH130N10F3-2 available in?

Surface mount TO-263-3 (D²Pak), supplied as H2Pak-2.

What is the maximum gate-source voltage?

±20V.

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