| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
19,990 pcs
|
19990 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STH110N10F7-2 is an N-channel Power MOSFET designed for switching applications. It features a 100V drain-source voltage (Vds) and a high continuous drain current capability of 110A at TC = 25°C.
This MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure, resulting in a low on-resistance of 6.5mΩ at 55A and 10V gate-source voltage. The input capacitance (Ciss) is 5117 pF at 50V, and the gate charge (Qg) is 72 nC at 10V. It operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 150W (Tc).
The device is available in an H2Pak-2 package, suitable for surface mounting. Its robust design and electrical characteristics make it suitable for various switching applications where efficiency and reliability are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100 V.
H2PAK-2 (also known as TO-263-3, D²Pak).
-55°C to 175°C (junction temperature).
110 A at Tc=25°C.
6.5 mOhm maximum at 55A, 10V.
4.5 V typical at 250µA.
150 W at Tc=25°C.