| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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The STH10N80K5-2AG is an N-Channel power MOSFET manufactured by STMicroelectronics. It features a maximum drain-source voltage of 800V and a continuous drain current of 8A at case temperature. With a maximum on-resistance of 680mOhm at 4A and 10V gate drive, it offers efficient switching performance.
The device has a gate charge of 17.3nC and input capacitance of 426pF, making it suitable for high-frequency switching applications. The maximum power dissipation is 121W at case temperature, and the operating junction temperature range is -55°C to 150°C.
This MOSFET is housed in a TO-263-3 package, also referred to as D²Pak or H2Pak-2, designed for surface-mount assembly. The package provides good thermal conductivity for power dissipation. Typical applications include power factor correction, high-voltage DC-DC converters, and switching power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB; supplier device package H2Pak-2.
-55°C to 150°C (junction).
8A at case temperature.
680mOhm at 4A and 10V.
17.3nC at 10V.
426pF at 100V.