| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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92,400 pcs
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92400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STMicroelectronics STGYA75H120DF2 is a high-performance Trench Gate Field-Stop Insulated Gate Bipolar Transistor (IGBT). Designed for demanding applications, it features a robust 1200 V voltage rating and a significant 150 A current capacity, with a power dissipation of 750 W.
Key electrical characteristics include a maximum Vce(on) of 2.6V at 15V gate voltage and 75A current, a gate charge of 313 nC, and switching energies of 4.3 mJ (on) and 3.9 mJ (off). The device operates within a wide temperature range of -55°C to 175°C (TJ).
This IGBT is housed in a TO-247-3 package and utilizes a Through Hole mounting type, making it suitable for various industrial and power electronics designs. Its input type is standard, and it has a reverse recovery time of 356 ns.
This component is compliant with RoHS3 standards and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 1200 V.
It is available in the TO-247-3 package.
The operating temperature range is -55°C to 175°C (TJ).
Yes, it is RoHS3 Compliant.
The maximum current rating is 150 A.
The Vce(on) maximum is 2.6V at 15V, 75A.
The switching energy is 4.3mJ (on) and 3.9mJ (off).