STGYA75H120DF2 The STMicroelectronics STGYA75H120DF2 is a Trench Gate Field-Stop IGBT transistor. It offers a 1200V voltage rating and 150A current capability.
Mfr Part #:

STGYA75H120DF2

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STGYA75H120DF2 is a Trench Gate Field-Stop IGBT transistor. It offers a 1200V voltage rating and 150A current capability.
✓ Total Stock: 92,400 pcs
$ Price Range: $4.16

STGYA75H120DF2 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
92,400 pcs
92400 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16

STGYA75H120DF2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

STGYA75H120DF2 Description

Short technical summary and product information.

The STMicroelectronics STGYA75H120DF2 is a high-performance Trench Gate Field-Stop Insulated Gate Bipolar Transistor (IGBT). Designed for demanding applications, it features a robust 1200 V voltage rating and a significant 150 A current capacity, with a power dissipation of 750 W.

 

Key electrical characteristics include a maximum Vce(on) of 2.6V at 15V gate voltage and 75A current, a gate charge of 313 nC, and switching energies of 4.3 mJ (on) and 3.9 mJ (off). The device operates within a wide temperature range of -55°C to 175°C (TJ).

 

This IGBT is housed in a TO-247-3 package and utilizes a Through Hole mounting type, making it suitable for various industrial and power electronics designs. Its input type is standard, and it has a reverse recovery time of 356 ns.

 

This component is compliant with RoHS3 standards and has an MSL rating of 1.

STGYA75H120DF2 Quick Information

Product Type: IGBT Transistor
Canonical Name: STMicroelectronics STGYA75H120DF2 Trench Gate Field-Stop IGBT
Subcategory: IGBTs - Single

STGYA75H120DF2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STGYA75H120DF2 Estimated Pricing

Qty Low High
1+ $4.16 $4.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

STGYA75H120DF2 Features

  • 1200V voltage rating for high power applications.
  • 150A current capability for demanding loads.
  • 750W power dissipation capacity.
  • Wide operating temperature range: -55°C to 175°C.
  • Through Hole mounting for easy integration.

STGYA75H120DF2 Applications

  • Ideal for power supply circuits.
  • Suitable for motor control applications.
  • Used in industrial automation systems.
  • Applicable for renewable energy systems.

STGYA75H120DF2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the STGYA75H120DF2?

The operating voltage is 1200 V.

What package type is the STGYA75H120DF2 available in?

It is available in the TO-247-3 package.

What is the operating temperature range for this IGBT?

The operating temperature range is -55°C to 175°C (TJ).

Is the STGYA75H120DF2 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the maximum current rating for the STGYA75H120DF2?

The maximum current rating is 150 A.

What is the Vce(on) maximum value for this device?

The Vce(on) maximum is 2.6V at 15V, 75A.

What is the switching energy for the STGYA75H120DF2?

The switching energy is 4.3mJ (on) and 3.9mJ (off).

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