| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,020 pcs
|
28020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STMicroelectronics STGYA50H120DF2 is a high-performance IGBT designed for power switching applications. It features TRENCH GATE FIELD-STOP technology, offering a 1200V collector-emitter breakdown voltage and a continuous collector current of 100A.
With a maximum power dissipation of 535W, this IGBT is suitable for demanding applications. Key electrical characteristics include a Vce(on) of 2.6V at 15V/50A, a gate charge of 210 nC, and switching energies of 2mJ (on) and 2.1mJ (off). The operating temperature range is -55°C to 175°C (TJ).
The component is packaged in a TO-247-3 case with through-hole mounting. Its robust design and specifications make it a reliable choice for various industrial and power electronics systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200 V.
TO-247-3 through-hole package.
-55°C to 175°C (junction temperature).
Trench Field Stop.
100 A.
2mJ (on) and 2.1mJ (off) under test conditions of 600V, 50A, 10Ohm, 15V.
210 nC.