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STGWT80H65DFB The STMicroelectronics STGWT80H65DFB is a Trench Field Stop IGBT transistor with a 650V rating, 120A current, and 469W power. It is packaged in a TO-3P-3, SC-65-3 case.
Mfr Part #:

STGWT80H65DFB

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STGWT80H65DFB is a Trench Field Stop IGBT transistor with a 650V rating, 120A current, and 469W power. It is packaged in a TO-3P-3, SC-65-3 case.
✓ Total Stock: 1,200 pcs
$ Price Range: $4.16

STGWT80H65DFB Available from 1 distributor

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✓ Non-Authorised
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1,200 pcs
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STGWT80H65DFB Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Lead Style
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage
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STGWT80H65DFB Description

Short technical summary and product information.

The STMicroelectronics STGWT80H65DFB is a single IGBT transistor designed for power applications. It features a Trench Field Stop IGBT type and operates at a voltage of 650V with a continuous current rating of 120A. The device offers a power dissipation of 469W and a low saturation voltage of 2V at 15V gate voltage and 80A.

 

This IGBT has a fast switching time with a Td(on) of 84ns/280ns and switching energy of 2.1mJ (on) and 1.5mJ (off). The reverse recovery time (trr) is 85 ns, and the gate charge is 414 nC. It operates within a temperature range of -55°C to 175°C (TJ).

 

The STGWT80H65DFB is mounted using a through-hole method and comes in a TO-3P-3, SC-65-3 package, with the supplier device package being TO-3P. Its input type is standard.

STGWT80H65DFB Quick Information

Product Type: IGBT Transistor
Canonical Name: STMicroelectronics STGWT80H65DFB IGBT
Subcategory: Single

STGWT80H65DFB Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STGWT80H65DFB Estimated Pricing

Qty Low High
1+ $4.16 $4.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

STGWT80H65DFB Features

  • Trench Field Stop IGBT transistor technology.
  • High voltage rating of 650V.
  • Continuous current of 120A.
  • 469W power dissipation.
  • TO-3P-3 package for through-hole mounting.

STGWT80H65DFB Applications

  • Suitable for high-power switching applications.
  • Used in industrial power supplies.
  • Applicable in motor control circuits.
  • Ideal for power factor correction.

STGWT80H65DFB FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum operating voltage of the STGWT80H65DFB?

The maximum collector-emitter voltage is 650V.

What is the continuous collector current rating?

The continuous collector current rating is 120A.

What is the power dissipation of this IGBT?

The power dissipation is 469W.

What package is the STGWT80H65DFB available in?

It is available in a TO-3P-3 (SC-65-3) through-hole package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What is the gate charge of the STGWT80H65DFB?

The gate charge is 414nC.

What is the reverse recovery time?

The reverse recovery time is 85ns.

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