| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,315 pcs
|
4315 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
600 pcs
|
600 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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The STGWT60H65FB is an IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, belonging to the HB series. This component is designed for high-speed applications and features a Trench gate field-stop architecture.
Key electrical specifications include a Collector Emitter Voltage (VCEO) of 650V, a Collector Emitter Breakdown Voltage of 650V, and a Max Collector Current of 80A. The Collector Emitter Saturation Voltage is rated at 1.6V. The device can handle a Max Power Dissipation of 375W.
Thermal characteristics include a Max Operating Temperature of 175°C and a Min Operating Temperature of -40°C. Mechanically, the component has a width of 5mm, a height of 20.1mm, and a length of 15.8mm, with a weight of 6.756003g. It has 3 pins and is designed for Through Hole mounting.
Environmental compliance includes RoHS3 compliance and a Moisture Sensitivity Level (MSL) of 1. The component is also Lead Free and REACH Unaffected.