| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,040 pcs
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2040 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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STGWT40HP65FB is a Trench Field Stop IGBT from STMicroelectronics. It is designed for high power switching applications with a collector-emitter voltage rating of 650V and continuous collector current rating of 80A. Maximum power dissipation is 283W. The device operates at junction temperature from -55°C to 175°C.
With a typical gate charge of 210nC and specified off-state switching energy of 363µJ under 400V, 40A test conditions, the STGWT40HP65FB provides efficient switching behavior. The maximum collector-emitter saturation voltage is 2V at Vge=15V and Ic=40A. Reverse recovery time is 140ns.
The IGBT is available in a TO-3P-3 (SC-65-3) through-hole package with supplier device package TO-3P and mounting type Through Hole.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
It is a Trench Field Stop IGBT (also described as Trench Gate Field-Stop).
650 V.
80 A.
283 W.
-55°C to 175°C junction temperature.
TO-3P-3 (SC-65-3) through-hole package, with supplier device package TO-3P.
2 V maximum at Vge=15V and Ic=40A.