| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,300 pcs
|
2300 pcs | On Request | 1 | On Request | On Request | 2012 | On Request | On Request |
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| Gate Charge | |
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| Supplier Device Package | |
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The STMicroelectronics STGWT38IH130D is a very fast Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It offers a collector-emitter voltage of 1300V and a continuous collector current capability of 63A at 25°C.
This IGBT features a low saturation voltage and low switching losses, making it suitable for applications requiring efficient power conversion. The device has a total power dissipation of 250W at 25°C and operates within a junction temperature range of -55°C to 150°C.
Packaged in a TO-3P-3 Full Pack, the STGWT38IH130D is designed for through-hole mounting. Its robust construction and electrical characteristics make it a reliable choice for demanding industrial and consumer electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1300V.
TO-3P-3 Full Pack (through-hole).
-55°C to 150°C.
33A.
250W at 25°C case temperature.
2.8V maximum.
127nC.