| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,837 pcs
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1837 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Charge | |
| IGBT Type | |
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| Reverse Recovery Time (trr) | |
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| Vce(on) (Max) @ Vge, Ic | |
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The STMicroelectronics STGWA80H65DFB is a high-speed IGBT from the HB series, developed using an advanced trench gate and field-stop structure. This device operates at 650V and can handle a continuous collector current of 80A at 100°C, with a maximum pulsed current of 240A. It features a maximum junction temperature of 175°C and a typical VCE(sat) of 1.6V at 80A.
Designed for applications such as photovoltaic inverters and high-frequency converters, the STGWA80H65DFB offers an optimal balance between conduction and switching losses. Its tight parameter distribution and positive VCE(sat) temperature coefficient ensure safer paralleling operation. The IGBT is housed in a TO-247-3 package with long leads, suitable for through-hole mounting.
Key electrical characteristics include a turn-on delay of 84ns/280ns and a reverse recovery time of 85ns. The device also has a gate charge of 414 nC and a maximum power dissipation of 469W. The operating temperature range is from -55°C to 175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 650 V.
The device comes in a TO-247-3 package with long leads.
The operating junction temperature range is -55°C to 175°C.
The continuous collector current is 120 A at 25°C and 80 A at 100°C.
Typical turn-on energy is 2.1 mJ and turn-off energy is 1.5 mJ.
The gate charge is 414 nC.
The reverse recovery time is 85 ns.