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STGWA75H65DFB2 The STGWA75H65DFB2 is a 650 V, 115 A Trench Field Stop IGBT with 357 W power dissipation. It features a low Vce(sat) of 2 V and 88 ns reverse recovery time.
Mfr Part #:

STGWA75H65DFB2

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STGWA75H65DFB2 is a 650 V, 115 A Trench Field Stop IGBT with 357 W power dissipation. It features a low Vce(sat) of 2 V and 88 ns reverse recovery time.
✓ Total Stock: 120,810 pcs
$ Price Range: $4.16

STGWA75H65DFB2 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Risen Electronics ✓
Non-Authorised Inventory information
112,800 pcs
On Request
112800 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
Fe Components ✓
Non-Authorised Inventory information
8,010 pcs
On Request
8010 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STGWA75H65DFB2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Lead Style
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
SVHC Present
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage
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STGWA75H65DFB2 Description

Short technical summary and product information.

The STGWA75H65DFB2 is an insulated gate bipolar transistor (IGBT) from STMicroelectronics featuring Trench Field Stop technology. It is designed for high-efficiency power switching applications.

 

This device is rated for a collector-emitter voltage of 650 V and a continuous collector current of 115 A. It can dissipate up to 357 W of power. The maximum collector-emitter saturation voltage is 2 V at a gate-emitter voltage of 15 V and a collector current of 75 A. The turn-on switching energy is 1.428 mJ and turn-off energy is 1.05 mJ, while the gate charge is 207 nC.

 

The device operates over a junction temperature range of -55°C to 175°C. It is supplied in a TO-247-3 package with long leads, which is suitable for through-hole mounting.

STGWA75H65DFB2 Quick Information

Product Type: Insulated Gate Bipolar Transistor (IGBT)
Canonical Name: STMicroelectronics STGWA75H65DFB2 Trench Field Stop IGBT
Subcategory: Single IGBT

STGWA75H65DFB2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STGWA75H65DFB2 Estimated Pricing

Qty Low High
1+ $4.16 $4.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

STGWA75H65DFB2 Features

  • Trench field stop IGBT technology.
  • Rated for 650 V collector-emitter voltage.
  • 115 A continuous collector current.
  • 2 V maximum saturation voltage.
  • Available in TO-247-3 through-hole package.

STGWA75H65DFB2 Applications

  • Ideal for power conversion systems.
  • Suitable for high-frequency switching circuits.
  • Used in industrial motor drives.
  • Can be used in uninterruptible power supplies.

STGWA75H65DFB2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

650 V.

What package is the STGWA75H65DFB2 available in?

TO-247-3 with long leads.

What is the operating temperature range?

-55°C to 175°C junction temperature.

What is the maximum continuous collector current?

115 A.

What is the maximum power dissipation?

357 W.

What is the maximum collector-emitter saturation voltage?

2 V at 15 V gate-emitter voltage and 75 A collector current.

What are the switching energy losses for this IGBT?

Turn-on energy is 1.428 mJ and turn-off energy is 1.05 mJ.

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