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STGWA40H65DFB2 The STMicroelectronics STGWA40H65DFB2 is a Trench Gate Field-Stop IGBT Transistor designed for high-speed applications. It features a 650V rating and a 72A continuous collector current.
Mfr Part #:

STGWA40H65DFB2

Available from 4 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STGWA40H65DFB2 is a Trench Gate Field-Stop IGBT Transistor designed for high-speed applications. It features a 650V rating and a 72A continuous collector current.
✓ Total Stock: 445,612 pcs
$ Price Range: $4.16

STGWA40H65DFB2 Available from 4 distributors

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Risen Electronics ✓
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441,600 pcs
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441600 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
Xingangxin ✓
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1,574 pcs
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1574 pcs On Request 1 On Request On Request On Request On Request On Request
Fe Components ✓
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1,438 pcs
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1438 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
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1,000 pcs
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1000 pcs On Request 1 On Request On Request On Request On Request On Request
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STGWA40H65DFB2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Power Dissipation
Reverse Recovery Time (trr)
SVHC Present
Supplier Device Package
Supplier Package
Switching Energy
Td (on
Technology
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage
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STGWA40H65DFB2 Description

Short technical summary and product information.

The STMicroelectronics STGWA40H65DFB2 is a high-speed IGBT transistor from the HB2 series. It utilizes Trench Gate Field-Stop technology for efficient switching performance.

 

Key electrical specifications include a maximum collector-emitter voltage of 650V and a continuous collector current of 72A at 25°C. The device offers a typical turn-on delay of 18ns and a turn-off delay of 72ns, with switching energies of 765µJ (on) and 410µJ (off). The collector-emitter saturation voltage is 2V at 15V gate-emitter voltage and 40A collector current.

 

This IGBT transistor is housed in a TO-247-3 package with through-hole mounting. It operates within a temperature range of -55°C to +175°C and has a power dissipation rating of 230W. The device is constructed with Silicon (Si) technology.

 

The STGWA40H65DFB2 is suitable for various power electronic applications requiring fast switching and high voltage capabilities.

STGWA40H65DFB2 Quick Information

Product Type: IGBT Transistor
Series: HB2
Canonical Name: STMicroelectronics STGWA40H65DFB2 Trench Gate Field-Stop IGBT Transistor
Subcategory: IGBTs

STGWA40H65DFB2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STGWA40H65DFB2 Estimated Pricing

Qty Low High
1+ $4.16 $4.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

STGWA40H65DFB2 Features

  • Trench Gate Field-Stop IGBT technology.
  • 650V collector-emitter voltage rating.
  • 72A continuous collector current.
  • Fast switching times: 18ns on, 72ns off.
  • TO-247 package with through-hole mounting.

STGWA40H65DFB2 Applications

  • High-speed power switching applications.
  • Industrial motor control systems.
  • Power factor correction circuits.
  • Uninterruptible power supplies (UPS).

STGWA40H65DFB2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

650 V

What is the package type?

TO-247-3

What is the operating temperature range?

-55°C to +175°C

What is the maximum continuous collector current?

72 A at 25°C

What is the typical collector-emitter saturation voltage?

2V typical at 15V, 40A

What is the typical gate charge?

153 nC

What are the typical switching energies?

Turn-on: 765µJ, Turn-off: 410µJ

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