| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
39,000 pcs
|
39000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
2,505 pcs
|
2505 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STMicroelectronics STGWA40H65DFB is a single IGBT transistor featuring Trench Field Stop technology. It offers a high voltage rating of 650V and a substantial current capability of 80A.
Key electrical characteristics include a Vce(on) maximum of 2V at 15V and 40A, with switching energy values of 498µJ (on) and 363µJ (off). The device also has a gate charge of 210 nC and a reverse recovery time of 62 ns.
This IGBT operates within a temperature range of -55°C to 175°C (TJ) and has a power dissipation of 283W. It is packaged in a TO-247-3 format with long leads, suitable for through-hole mounting.
The STGWA40H65DFB is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 650V.
The maximum collector current is 80A.
The maximum power dissipation is 283W.
It is available in a TO-247-3 through-hole package with long leads.
The junction temperature range is -55°C to 175°C.
The gate charge is 210nC.
Turn-on switching energy is 498µJ and turn-off switching energy is 363µJ.